A Flexible, Physically based SPICE Model for the JFET Resistance in Silicon Carbide and Super-Junction MOSFETs
Konferenz: PCIM Asia 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.09.2021 - 11.09.2021 in Shenzhen, China
Tagungsband: PCIM Asia 2021
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Jia, Kan; Xiao, Yunpeng (ON Semiconductor, China)
Betak, Petr; Foff, Jaromir; Lehocky, Jiri; Zurek, Dan (ON Semiconductor, Czech Republic)
He, Canzhong; Victory, James (ON Semiconductor, USA)
Inhalt:
This paper proposes a novel, physically based SPICE model for the JFET region resistance in Silicon Carbide (SiC) and Super-Junction MOSFETs. The process parameter based model considers the JFET region resistance nonlinearity due to junction depletion and velocity saturation effects. The SPICE agnostic model ports across multiple industry standard simulation platforms. The model has been validated with ON Semiconductor's advanced SiC MOSFET and Super-Junction technologies.