Investigation on electrical characteristic of 3.3kV SiC MOSFET with integrated SBD
Konferenz: PCIM Asia 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.09.2021 - 11.09.2021 in Shenzhen, China
Tagungsband: PCIM Asia 2021
Seiten: 4Sprache: EnglischTyp: PDF
Autoren:
Song, Guan; Wang, Yafei; Chen, Ximing; Li, Chenzhan (State key Laboratory of Advanced Power Semiconductor Devices, Tianxin High-tech Park, Shifeng District, Zhuzhou, Hunan, China & Zhuzhou CRRC Times Semiconductor Co., Ltd., Tianxin High-tech Park, Shifeng District, Zhuzhou, Hunan, China)
Inhalt:
The switch-on voltage of parasitic diodes can be increased by using SiC MOSFET integrating SBD has been demonstrated through investigating 3.3kV SiC MOSFET with integrated SBD. In this paper, a 3.3kV SiC MOSFET with integrated SBD is designed and fabricated. The on-state voltage drop of integrated SBD and the switch-on voltage of parasitic diode are classified as 4.3V and 6V at 175 °C which indicates that the integrated SBD can prevent the bipolar degradation of SiC MOSFET. Furthermore, the specific onresistance (RON,SP) and breakdown voltage are 38mOmega·cm2 and 4035V respectively, which indicates that the chip has a broad application prospect in the high voltage market of rail transit.