Improvement of SCSOA, I I2t and reliability of in in-vehicle power modules by RC RC-IGBT and leadframe structure

Inhalt:
This paper describes the improvement of short circuit safety operating area (SCSOA), I²t capability and reliability of power module used in electric vehicles (EV). As a result of the comparison between the conventional structure of IGBT (Insulated Gate Bipolar Transistor) / FWD (Free Wheel Diode) with bondwires and the proposed structure of RC-IGBT (Reverse Conduction IGBT) with leadframe, the proposed structure shows 2.4 times higher I² capability. Furthermore, the accumulation of the cyclic fatigue damage ratio of the proposed structure can achieve 60% lower than the conventional structure.