New 5.2kV StakPak Platform with Innovative Second Generation BIGT chip
Konferenz: PCIM Asia 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
09.09.2021 - 11.09.2021 in Shenzhen, China
Tagungsband: PCIM Asia 2021
Seiten: 8Sprache: EnglischTyp: PDF
Autoren:
Boksteen, Boni; De Michielis, Luca; Tsyplakov, Evgeny; Chen, Makan; Prindle, Daniel; Dugal, Franc; Vitale, Wolfgang Amadeus; Baschnagel, Andreas; Paques, Gontran (Hitachi ABB Power Grids, Semiconductors, Switzerland)
Inhalt:
In this paper we present the novel 5.2kV BIGT chip technology (BIGT2) that has enabled the new advanced StakPak generation. The developed chip is a reverse conducting or Bimode IGBT that has been optimized for low conduction losses re-sulting in a 30% improvement of the current han-dling capability with respect to the previous gener-ation. The BIGT2 chip is based on the rugged en-hanced planar (EP) IGBT cell and pilot anode de-sign technologies. The following sections describe the implemented design features that enabled to achieve an increased capability in both IGBT (1st quadrant) and diode (3rd quadrant) modes while maintaining the same StakPak footprint.