New Generation High Power Density 3300V RC-IGBT Power Module
Konferenz: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
03.05.2021 - 07.05.2021 in Online
Tagungsband: PCIM Europe digital days 2021
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Dong, Guozhong; Yuan, Tao; Zhu, Liheng; Wang, Mengyan; Wu, Yibo; Peng, Yongdian; Luo, Haihui (Zhuzhou CRRC Times Semiconductor Co.,Ltd., Zhuzhou, Hunan, China & State key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, Hunan, China)
Chang, Guiqin (Zhuzhou CRRC Times Semiconductor Co.,Ltd., Zhuzhou, Hunan, China & State key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou, Hunan, China & State Key Laboratory of Alternate Electrical Power System With Renewable Energy Sources (North China Electric Power University), Changping District, Beijing, China)
Inhalt:
In this paper, it presents a new generation high power density 3300V RC-IGBT power module. IGBT modules have been increasingly required to be smaller in size while exhibiting lower power dissipation and higher reliability. To meet the requirements, a 3300V reverse conducting IGBT (RC-IGBT) module is been developed by using an RC-IGBT that integrates an IGBT and a freewheeling diode (FWD) functions into one chip. When conducting or reverse conducting, it can use the non-working functional area on the chip to dissipate heat. The thermal resistance of RC-IGBT module is reduced by more than 30%, and its on-state characteristics are better than TIM1500ESM33-PSA012 in the same test conditions, which increase the power capacity and power density of the 3300V module to a new level.