Influence of Passive IGBT Control Scheme on Diode Recovery Behavior in Device Characterization Measurements

Inhalt:
Double pulse testing is commonly used for the characterization of dynamic properties of power electronic devices. Among other parameters, the diode snappiness and switching losses are evaluated and the results are part of the basis for the dimensioning of an inverter system. This approach implicitly assumes that switching events in double pulse testing and inverter operation are identical. However, this work shows that the above assumption does not always hold. Surprisingly, in a half bridge configuration, the control scheme of the IGBT not under test determines whether a switching event during inverter operation is reproduced accurately, with significant influence on gate resistor selection, EMC, and switching energies.