How to Choose the Optimal GaN-HEMT for a Hard Switching Application – A Guide
Konferenz: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
03.05.2021 - 07.05.2021 in Online
Tagungsband: PCIM Europe digital days 2021
Seiten: 8Sprache: EnglischTyp: PDF
Autoren:
Dobusch, Julian; Kohlhepp, Benedikt; Duerbaum, Thomas (Friedrich-Alexander-University Erlangen-Nürnberg (FAU) Electromagnetic Fields, Erlangen, Germany)
Schwanninger, Raffael (Friedrich-Alexander-University Erlangen-Nürnberg (FAU) Institute of Power Electronics (LEE), Erlangen, Germany)
Inhalt:
Modern GaN-HEMTs offer beneficial advantages over traditional Si-MOSFETs. GaN-HEMTs exhibit much lower stored charge (QOSS) while providing identical conduction losses (RDS;On). However, choosing the right switch is not straight forward and the non-linear relation of voltage and charge has to be taken into account. This paper presents a guide on how to select the right switch to minimize conduction and switching losses considering the crucial influence of all switches on the switching losses.