Influence of Power Cycling Aging to IGBT Hard Switching Behavior
Konferenz: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
03.05.2021 - 07.05.2021 in Online
Tagungsband: PCIM Europe digital days 2021
Seiten: 10Sprache: EnglischTyp: PDF
Autoren:
Liu, Xing; Huang, Qi; Baeumler, Christian; Lutz, Sojef; Basler, Thomas (Chemnitz University of Technology, Germany)
Deng, Erping (Chemnitz University of Technology, Germany & North China Electric Power University, China)
Chen, Jie (North China Electric Power University, China)
Inhalt:
In this paper, the Power Cycling Test (PCT) induced aging versus the switching behavior of the Insulated Gate Bipolar Transistor (IGBT) is comprehensively studied, since in some literature a modification of the switching after PCT was claimed. The different packaging styles and current levels are investigated in order to cover the influence factors on the switching behavior as much as possible. It has been found that without considering the influence of temperature after the power cycling aging, the IGBT switching behavior could be modified. However, this modification is insignificant and decidedly related to the package aging.