An Inverse Method to Evaluate the Chip Temperature Distribution within Press Pack IGBT
Konferenz: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
03.05.2021 - 07.05.2021 in Online
Tagungsband: PCIM Europe digital days 2021
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Chen, Jie (State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources (North China Electric Power University), Beijing, China)
Deng, Erping; Huang, Yongzhang (State Key Laboratory of Alternate Electrical Power System with Renewable Energy Sources (North China Electric Power University), Beijing, China & NCEPU (Yantai) Power Semiconductor Technology Research Institute Co., Ltd, Yantai, Shandong Province, China)
Inhalt:
Press Pack Insulated Gate Bipolar Transistor (PP IGBT) is quite famous for the high power applications but lacks in-depth reliability research, evaluation of chip temperature distribution will be more meaningful than classical virtual junction temperature for reliability assessment. In this paper, an inverse method combining the experimental measurement and numerical solution, called multi-current VCE (T) method is applied to evaluate the single chip temperature distribution within PPI in the power cycling test, which extends the capability in chip temperature measurement of the conventional VCE (T) method. Finally, the calculated results are verified by the designed experimental measurement.