Temperature-Dependent Electrical Characteristics of a β-Ga2O3 Schottky Barrier Diode

Inhalt:
The wide-bandgap semiconductor gallium oxide (Ga₂O₃) has recently stirred interest as a possible material for power electronics. One of the first packaged β-Ga2O3 Schottky barrier diodes is electrically characterized with static measurements at different junction temperatures. Although the device does not reach the theoretical limits at this early stage of development, it exhibits ideality factors close to unity and minimal change of junction capacitance over the entire temperature range. In addition, it is shown that the diode’s increase in differential on-resistance when temperature rises is significantly smaller than for commercial SiC reference devices. The findings are used to model the diode in LTSpice and show the potential of Ga2O3 devices for power and potentially high-temperature applications.