Experimental Characterization of Different GaN HEMTs used in a Full-Bridge Totem-Pole Power Factor Correction Topology for Electric Vehicles Charging Circuits

Inhalt:
Gallium nitride (GaN) offers fundamental advantages over silicon. Not only because of the resulting power savings and total system cost reduction, it also allows a higher operating frequency, improves the power density as well as the overall system efficiency. These are key success factors by developing of charging stage for EVs. In this paper the performances of different GaN HEMTs are experimentally investigated in relation to their application in a full-bridge totem-pole power factor correction circuit for Electric Vehicles (EVs) charging stage. In particular, the resulting switching trajectories as well as switching losses are investigated and compared and the challenges of using this new generation of power semiconductors are discussed. A 2500 W full-bridge totem-pole power factor correction circuit using GaN HEMTs was tested. According to charging power levels defined by SAE Electric Vehicle and Plug in Hybrid Electric Vehicle Recommended Practice, it can be concluded that the full-bridge totempole power factor correction circuit using GaN HEMTs can be used in the area of level one (maximum power of 2500 W) charging options.