Development of a GIT GaN Intelligent Power Module

Inhalt:
The properties of wide-bandgap (WBG) semiconductors are beneficial for a wide range of power electronics applications. In particular applications related to electric vehicles, be it cars or scooters, are of strong interest nowadays. The power electronic devices commonly used in these applications are usually packaged into modules. The use of emerging WBG components like gallium nitride (GaN) switches in classic power modules is at the moment not state of the art and the components are used as discrete devices affecting the development costs and performance. Therefore the integration of WBG-GaN devices into standard or custom packages is of primary importance. This work proposes a concept of module which allows for the integration of electronic components into a single housing to form an intelligent power module.