High-Efficiency Half-Bridge Module with SiC MOSFETs for High-Power-Density Applications
Konferenz: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
03.05.2021 - 07.05.2021 in Online
Tagungsband: PCIM Europe digital days 2021
Seiten: 5Sprache: EnglischTyp: PDF
Autoren:
Hu, Yuequan; Shao, Jianwen (Wolfspeed/Cree, USA)
Inhalt:
SiC power MOSFETS have gained wide applications like drivetrain, EV chargers, server powers, and energy storage system thanks to their low switching power losses resulting from fast switching and fast recovery body diode . They can offer high efficiency and high power density . This work will detail the electrical and thermal design and test results of a 3. 3.7 kW half half-bridge DC/DC module using surface mount SiC MOSFET MOSFETs with a screwless heatsink heatsink. A peak efficiency of 99.2% has been obtained with a size of 3.4″ x 1.4″ x 1″ for a 200 VDC input/ 390 VDC output Synchronous Boost converter.