A Flexible Test Setup for Long-Term Dynamic Characterization of SiC MOSFETs under Soft- and Hard-Switching Conditions

Inhalt:
Due to the superior material characteristics of Silicon Carbide (SiC), the use of SiC MOSFETs enables higher system power density or efficiency depending on the design perspective. To identify the improvement potential in the operation of a device, precise characterization is crucial. This paper presents a flexible and easily reconfigurable test setup to characterize the dynamic behavior of SiC MOSFETs under both hard- and soft-switching conditions at blocking voltages of up to 900 V and currents up to 300 A. It features a balancing circuit that enables long term test operation in both switching modes and as a future power cycling test setup.