A High Precision Dynamic Characterization Bench with a Current Collapse Measurement Circuit for GaN HEMT Operating at 175°C

Inhalt:
This work is dedicated to the dynamic behavior of a GaN HEMT thanks to a multi pulse tester (MPT) bench dedicated to the current collapse characterizations at high temperatures (up to 175deg C) by using a focused infrared beam while keeping the other electronic devices operating conditions close to room temperature. The bench is equipped with another inverter leg, which aim is to control the soaking time of the device under test (DUT). A circuit implementing high slew rate operational amplifiers allows measuring precisely the voltage drop across the GaN HEMT several nanoseconds after the end of the GaN HEMT turn-on. The MPT bench and the experimental results are presented in this work.