Wire Bonding Stress Analysis Under Short-Circuit Tests for SiC MOSFETs

Inhalt:
The aim of this paper is to analyze the electrothermal stress of bonding wires, which are usually welded on the die of SiC MOSFETs, during short-circuit events. The probability that this type of event can happen in the lifespan of power converters and its consequences need to be considered. SiC MOSFETs’ robustness can be evaluated by means of suitable short-circuit tests, and in case of non-destructive experiments, it is important to understand how this type of stress can impact on the reliability and lifespan of devices bonding wires. The present paper initially presents the experimental tests used to analyze the power profile sustained by the devices under testing, and after that finite elements simulations are performed based on the profile in order to understand the thermomechanical behavior of bonding wires.