Model Parameter Extraction Tool for the Analysis of Series-Connected SiC-MOSFETs
Konferenz: PCIM Europe digital days 2021 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
03.05.2021 - 07.05.2021 in Online
Tagungsband: PCIM Europe digital days 2021
Seiten: 8Sprache: EnglischTyp: PDF
Autoren:
de Vienne, Cedric Mathieu (Univ. Grenoble Alpes, CNRS, Grenoble INP*, G2Elab, Grenoble, France & SuperGrid Institute, Villeurbanne CEDEX, France)
Asllani, Besar; Lefebvre, Bruno (SuperGrid Institute, Villeurbanne CEDEX, France)
Lefranc, Pierre; Jeannin, Pierre-Olivier (Univ. Grenoble Alpes, CNRS, Grenoble INP*, G2Elab, Grenoble, France)
Inhalt:
This paper presents a parameter identification tool for SiC-MOSFET Spice models for the purposes of studying the impact of parameter’s spread on series-connected devices. A SiC-MOSFET model available in literature is adapted. A set of 30 commercial SiC-MOSFETs is characterized. The extration tool is used to generate Spice model file for each device, which are validated by comparison to double pulse measurement results. Generated SiC-MOSFET models are employed to perform simulation of switches made of two series-connected devices. The simulation results reveal that a difference of almost 0.2 V in VTH produces 21 % of VDS voltage unbalance during turn-off.