Novel Approach to Model GaN-HEMT Capacitances using Sigmoid Functions

Inhalt:
Simulation of circuits is of high importance in the design process of power electronic devices. Modeling the nonlinear behavior of switches can be challenging, especially regarding the parasitic capacitances. They, however, play a crucial role in determining switching losses as well as voltage slopes of soft switched converters. This paper presents an approach to improve the SPICE model of a GaN-HEMT by modeling the nonlinear datasheet slope of the switch capacitances with continuous sigmoid functions resulting in better accordance between datasheet and simulation model.