Method for extracting internal gate resistance of SiC MOSFETs from double-pulse measurements

Inhalt:
This paper discusses a new method for defining the internal gate resistance in behavioral compact models for SiC MOSFETs. The internal gate resistance is normally extracted from a small-signal analysis. However, due to the measurement conditions, the relevance of this method for the application is questionable. Therefore, a method to determine the internal gate resistance from double-pulse measurements was developed and is presented in this paper. It will be shown that with this method, it is possible to define the internal gate resistance by extracting the value from measurements taken under application-relevant conditions.