Advantages and challenges of using SiC MOSFETs in a high power density insulated HV/LV DC/DC converter
Konferenz: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.07.2020 - 08.07.2020 in Deutschland
Tagungsband: PCIM Europe digital days 2020
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Zeltner, Stefan; Seliger, Bernd; Haager, Daniel; Eckardt, Bernd; Bach, Linh; Yu, Zechun; Vater, Stephan; Bayer, Christoph; Schletz, Andreas (Fraunhofer IISB, Germany)
Umeda, Hidekazu; Morita, Tatsuo (Panasonic Industrial Devices Europe GmbH, Germany)
Inhalt:
A safe connection of on-board automotive electric power grids is done by insulating HV/LV DC/DC converters. Latest electric car architectures are operating with 800 V batteries and 48 V power grids. Hence, compact 800 V / 48 V DC/DC converters are necessary. Within the following paper advantages and challenges of using SiC MOSFETs in such applications are discussed. A developed compact prototype with maximum power density of ca. 8 kW/dm3 and power weight of ca. 3 kW/kg is presented which uses different suggested solutions to manage the named challenges when using SiC MOSFETs.