Method for Compensating the Effects of GaN-HEMTs on the Output Voltage in Inverters during Dead Time

Inhalt:
By using GaN-HEMTs in three-phase inverters, significantly higher switching frequencies can be achieved compared to conventional Si-MOSFETs. However, as the switching frequency increases, the influence of the GaN-HEMTs on the waveform of the output voltage also rises during dead time. Therefore, this paper demonstrates a procedure that compensates the influence of dead time, reverse conduction of GaN-HEMTs and the switching transition.