SiC MOSFETs Applications and Technology Robustness Evaluation under Avalanche Conditions

Konferenz: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.07.2020 - 08.07.2020 in Deutschland

Tagungsband: PCIM Europe digital days 2020

Seiten: 7Sprache: EnglischTyp: PDF

Autoren:
La Mantia, Salvatore (STMicroelectronics GmbH, Germany)
Pulvirenti, Mario; Sciacca, Angelo G.; Nania, Massimo (STMicroelectronics, Italy)

Inhalt:
This paper discusses about robustness evaluation of SiC MOSFETs under avalanche working conditions. Capability to sustain previous operating conditions, is required especially for power converters applied for electric traction. Indeed, possible failure of devices during freewheeling conduction or wrong gate driver command signals can involve converter power devices in avalanche. Therefore, experimental tests have been included in this paper reproducing the avalanche events, performing the unclamped inductive switching tests. Different SiC MOSFETs have been considered to assess technology robustness, evaluating failure energies under different test conditions.