Fast and reliable switching of parallel SiC MOSFET chips in a Halfbridge module

Inhalt:
In this paper, the RoadPak SiC power MOSFET half bridge module with multiple parallel chips is presented, which has been designed for stable operation under high speed switching conditions. The module utilizes up to ten MOSFET switches in parallel, reaching an effective current rating of 1100A for 750V rating and 980A for 1.2kV rating. Two module variants are presented; one with gate resistors internal of the module in series with the gate of every chip and one without internal gate resistors. The switching waveforms of both variants are presented and the stable operation for both is demonstrated in extreme switching conditions.