Physics-Based Device Model for A Silicon Carbide Trench MOSFET

Inhalt:
This paper describes a physics-based compact model for a silicon carbide trench MOSFET. The authors introduce the drain-source voltage dependency in channel mobility to reproduce the output characteristics. Hence, the proposed compact device model can reproduce the experimental static characteristics, especially in higher gate-source voltage in a linear region. In addition to the static characteristics, the simulated dynamic properties are also in good agreement with the experimental ones. The proposed compact device model is expected to be a promising circuit simulation tool.