A 6500 A, 4500V, 94 mm Assymmetric IGCT

Inhalt:
The development and performance of a 6500 A, 4500 V Integrated Gate Commutated Thyristor (IGCT) is described and illustrated. Primarily segment layout was investigated with the goal of maximising the controllable current. The tested layouts are disclosed in full. The mechanical design is based on an available platform for outer-ring-gate, 94 mm-diameter Silicon wafers. The best layout variant reliably switches currents exceeding 7800 A at 2800 V in single pulse at high temperatures. At low junction temperature, a weakness related to inductive over-voltage peaks limits the current capability. Frequency operation is stable up to a virtual junction temperature of approximately 230 C.