750 V, 10.5 mOhm SiC Power MOSFET for use in Electric Vehicles

Inhalt:
For the first time, a new 750 V SiC MOSFET chip is designed, fabricated, and tested for use in top-side and back-side sintering processes. The RDSON was measured to be 10.5 mOmega up to 150 A at 25 °C in package form. The corresponding specific RDSON was ~ 2 mOmega·cm2. A positive, but modest 40% increase in RDSON was measured from 25 °C to 175 °C. The measured mean breakdown voltage is >960 V which is well-suited for typical 400V Electric Vehicle (EV) drivetrain bus mission profiles, providing acceptable safe margin to FIT rates determined by cosmic ray. The low-inductive DCM(TM) 1000 technology platform has been identified as a robust half-bridge power module to utilize eight single MOSFET per topological switch. For SiC MOSFET technology, the dual-side sintered chip assembling technology DBB(r) and the cooling technology ShowerPower(r) 3D are combined in a transfer-molded package. Using a given mechanical footprint, the DCM(TM) 1000 can be customized to different performance levels or different mechanical environments.