Parasitic Turn-On of SiC MOSFETs – Turning a Bug into a Feature
Konferenz: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.07.2020 - 08.07.2020 in Deutschland
Tagungsband: PCIM Europe digital days 2020
Seiten: 7Sprache: EnglischTyp: PDF
Autoren:
Hofstetter, Patrick; Maier, Robert W.; Bakran, Mark-M. (University of Bayreuth, Center of Energy Technology (ZET), Germany)
Inhalt:
This paper shows, that the usually unwanted parasitic turn-on (PTO) in SiC MOSFETs does not always need to be of a disadvantage. It is shown that a small PTO can even be used to lower the maximum overvoltage at the body diode during the diode turn-off. In applications where this is the limiting condition for the switching speed, this means that the SiC MOSFET turn-on can be accelerated leading to significantly lower losses.