Enhancing short-circuit capability of high-performance IGBTs by gate-drive unit
Konferenz: PCIM Europe 2019 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07.05.2019 - 09.05.2019 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2019
Seiten: 7Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Fuhrmann, Jan; Werner, Robin; da Cunha, Julian; Eckel, Hans-Guenter (University of Rostock, Germany)
Inhalt:
High-performance IGBTs offer a very low saturation collector-emitter voltage which reduces the ON-state losses drastically. A significant disadvantage is limited short-circuit capability due to the high short-circuit currents. Within this paper, an advanced gate-drive unit is presented, which is rugged against false shortcircuit triggering and enables high-performance IGBT to withstand and turn OFF shorts. The ON-state VGE is reduced, when a high di/dt is detected, to a value where the IGBT safely desaturates and can be turned OFF.