Dual Side-Gate HiGT Breaking Through the Limitation of IGBT Loss Reduction
Konferenz: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
16.05.2017 - 18.05.2017 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2017
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Miyoshi, Tomoyuki; Takeuchi, Yujiro; Furukawa, Tomoyasu; Shiraishi, Masaki; Mori, Mutsuhiro (Hitachi Ltd., Japan)
Inhalt:
A novel Dual side-gate HiGT (High-conductivity IGBT) with an extremely small feedback capacitance (Cres) and a function of controllable conductivity modulation was proposed. Dynamic control of stored carrier concentration right before switching by tandem drive of the dual gate makes it possible to further reduce switching loss with conventional single gate IGBTs. Compared with the single gate drive on conventional side-gate HiGT, the dual side-gate HiGT further reduces loss during turn-off and turn-on by 31% and 12%, respectively. As a result, an inverter system with dual side-gate HiGTs can reduce power dissipation by a further 15% and break through the performance limit imposed by conventional IGBTs.