Cathode Emitter versus Carrier Lifetime Engineering of Thyristors for Industrial Applications
Konferenz: PCIM Europe 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
10.05.2016 - 12.05.2016 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2016
Seiten: 6Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Vobecky, Jan; Stiegler, Karlheinz (ABB Switzerland Ltd, Semiconductors, Switzerland)
Bellini, Marco (ABB Corporate Research Center, Switzerland)
Inhalt:
We experimentally demonstrate that the traditional way of reducing the recovery charge Qrr by electron irradiation can be replaced by appropriate density of cathode shorts of an appropriate size. Functionality of this approach is demonstrated for the thyristors of 1.8 and 2.8 kV voltage classes, for which an improvement of technology curve Qrr – VT was achieved. In addition, the higher density of cathode shorts improves the dV/dt capability and circuit commutated recovery time tq. The Irradiation Free Concept provides thyristors with improved ratings, while it eliminates the fear of annealing the radiation defects from electron irradiation under overload conditions, when thyristors are repeatedly exposed to ON-state currents close to the nominal value of surge ON-state current ITSM.