Design and Evaluation of Gate Drivers of SiC MOSFET

Inhalt:
The control of SiC MOSFET may consider a crucial issue owing to their effects on optimizing the efficiency of their applications. Thus, the optimal parameters of a gate driver should be fulfilled. In order to design correctly a gate driver one must understand the electrical characteristics of the SiC MOSFET. This paper aims to design a gate driver that fits with the driving requirements of the SiC MOSFET and to analyze and compare the performance of the proposed circuit with the FOD3180 gate driver, which is manufactured by Fairchild; in terms of the switching characteristics and the electromagnetic interference (EMI). This study is going further in the sake of finding the optimal control parameters for both circuits in order to reduce the losses, subsequently increasing the applications efficiency.