A New Analog Behavioral SPICE Macro Model with Thermal and Self-Heating effects for Silicon Carbide Power MOSFETs

Inhalt:
Self-heating effects in Silicon Carbide Power MOSFETs have been incorporated into a behavioural SPICE model. It contains a dynamic link between electrical and thermal components which allows a good prediction of DC and AC variation due to temperature in the range of the component. It allows estimating the junction-temperature when the device works in the power application. Simulation results on a STMicroelectronics SiC MOSFET will close the paper.