Challenges in Switching SiC MOSFET without Ringing
Konferenz: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
20.05.2014 - 22.05.2014 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2014
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Li, Helong; Munk-Nielsen, Stig (Aalborg University, Denmark)
Inhalt:
Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanism is analysed in detail. According to the analysis, the optimal circuit design to minimize the parasitic parametric is introduced for a clean switching waveform. Experiment results show the clean switching waveform of SiC MOSFET. Guidelines are established for circuit design.