Influence of the charge distribution on the electrical behavior of the BIGT

Inhalt:
The BIGT is a hybrid structure which contains a conventional IGBT (pilot-IGBT) and a reverse-conducting IGBT (RC-IGBT) [1], [2]. The distribution of the current between these devices has an important impact on the switching and on-state behavior [3], [5]. This distribution will be influenced by a number of factors like temperature and di/dt. At a high di/dt the current flows mainly in the pilot-IGBT and transition of the RC-IGBT from unipolar to bipolar operations occurs at a higher current level. As a reason of that the on-state voltage and the turn-off behavior at low and medium current level depend on the di/dt.