Ultra High Voltage SiC Power Devices and Its Impact on Future Power Delivery System
Konferenz: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
20.05.2014 - 22.05.2014 in Nürnberg, Deutschland
Tagungsband: PCIM Europe 2014
Seiten: 8Sprache: EnglischTyp: PDF
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Autoren:
Huang, Alex (NSF FREEDM Systems Center, NC State University, USA)
Cheng, Lin; Palmour, John W. (Cree Inc., USA)
Scozzie, Charles (U. S. Army Research Laboratories, USA)
Inhalt:
Wide bandgap semiconductor based power devices have the capability to reach higher voltage, higher frequency and higher temperature compared with silicon based power devices. These capabilities have the potential to revolutionize the way we deliver and manage power in the future. This paper reviews the progress of ultra high vltage SiC power devices with a focus on how it will enable the next generation power delivery systems.