Damascene Metal Gate Technology: A Front-end CMP Based Universal Platform for High-k Evaluation at the Device Level
Konferenz: ICPT 2007 - International Conference on Planarization / CMP Technology
25.10.2007 - 27.10.2007 in Dresden, Germany
Tagungsband: ICPT 2007
Seiten: 5Sprache: EnglischTyp: PDF
Persönliche VDE-Mitglieder erhalten auf diesen Artikel 10% Rabatt
Autoren:
Endres, Ralf; Schwalke, Udo (Institute for Semiconductor Technology and Nanoelectronics, Technische Universität Darmstadt, D-64289 Darmstadt, Germany)
Inhalt:
This paper presents the first successful attempt to integrate crystalline high-K gate dielectrics into a virtually damage-free damascene metal gate process by means of frontend chemical mechanical planarization. Process details as well as initial electrical characterization results on fully functional gate Gd2O3 dielectric MOSFETs with equivalent oxide thickness (EOT) down to 1nm are discussed.