Voltage-Activated Electrochemical Reactions of Copper for Electrochemical Mechanical Polishing (ECMP) Application
Konferenz: ICPT 2007 - International Conference on Planarization / CMP Technology
25.10.2007 - 27.10.2007 in Dresden, Germany
Tagungsband: ICPT 2007
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Seo, Yong-Jin (Department of Electrical Engineering, Daebul University, Youngam 526-702, South Korea)
Park, Sung-Woo (Research Institute of Energy Resources Technology, Chosun University, South Korea)
Han, Sang-Jun; Lee, Young-Kyun; Lee, Woo-Sun (Department of Electrical Engineering, Chosun University, Gwangju 501-759, South Korea)
Inhalt:
Voltage-activated electrochemical reactions of Cu for electrochemical mechanical polishing (ECMP) application were investigated with different concentration of HNO3 electrolyte. The electrochemical characteristics of Cu such as active, passive, transient and trans-passive state were evaluated from its current-voltage (I-V) curve obtained by linear sweep voltammetry (LSV) and cyclic voltammetry (CV) method. The proposed mechanism and analyses were a good methodology in finding suitable electrochemical process parameter for ECMP application.