Full Sequence Ecmp for Advanced Low Stress Copper Planarization
Konferenz: ICPT 2007 - International Conference on Planarization / CMP Technology
25.10.2007 - 27.10.2007 in Dresden, Germany
Tagungsband: ICPT 2007
Seiten: 6Sprache: EnglischTyp: PDF
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Autoren:
Groschopf, Johannes; Steffen, Katja; Richter, Dirk; Kramer, Jens; Seidel, Robert; Grillberger, Michael (AMD Fab 36 LLC & Co. KG, Wilschdorfer Landstraße 101, 01109 Dresden, Germany)
Donohoe, Ray; Kober, Christian (Applied Materials GmbH, Buchenstrasse 16b, 01097 Dresden, Germany)
Gu, Haiyang; Hu, Yongqi; Wang, You; Wang, Yuchun (Applied Materials, 974 E. Arques Ave, Sunnyvale, CA 94085)
Inhalt:
The planarization of Copper becomes increasingly demanding in advanced multilayer wiring schemes with ultra low-k dielectric isolation. Planarization technology needs to support ultra low surface topography to support next generation lithography depth of focus requirements. Additionally, a significant reduction of across wafer level and die level sheet resistance variation is becoming more critical due to the observed exponential sheet resistance increase with shrinking line geometries. Full sequence electrochemical mechanical planarization (Ecmp) is a revolutionary and new breakaway method for Copper planarization which has the potential to meet process requirements for the next technology nodes.