Ultrahigh gain-bandwidth product Ge/Si avalanche photodetector assisted by nonuniform electric field distribution
Konferenz: ECOC 2024 - 50th European Conference on Optical Communication
22.09.2024-26.09.2024 in Frankfurt, Germany
Tagungsband: ITG-Fb. 317: ECOC 2024
Seiten: 4Sprache: EnglischTyp: PDF
Autoren:
Cao, Hengzhen; Sun, Weichao; Xiang, Yuluan; Xie, Jin; Guo, Jingshu; Dai, Daoxin
Inhalt:
We demonstrated a lateral Ge/Si avalanche photodetector with a record ultrahigh gain-band-width product of 3036 GHz. A PN-type multiplication region was introduced for achieving the nonuniform electric field distribution. The device exhibits a bandwidth of 33 GHz and a gain of 92 under -24 dBm optical power.