IM/DD Silicon Receiver Subassembly with Opto-Electrical Bandwidth of 84 GHz
Konferenz: ECOC 2024 - 50th European Conference on Optical Communication
22.09.2024-26.09.2024 in Frankfurt, Germany
Tagungsband: ITG-Fb. 317: ECOC 2024
Seiten: 4Sprache: EnglischTyp: PDF
Autoren:
Peczek, Anna; Wietstruck, Matthias; Winzer, Georg; Mai, Christian; Lischke, Stefan; Khafaji, Mohammad Mahdi; Schultze, Sebastian; Voss, Thomas; Krueger, Patrick; Kroh, Aleksandra; Zimmermann, Lars
Inhalt:
We report on performance of silicon direct detection subassembly achieving 112 GBaud PAM4 at 1300 nm. The chip was realized by direct Al-Al wafer bonding integrating a BiCMOS TIA and germanium waveguide- integrated photodiodes. We demonstrated a receiver efficiency of 1.8 pJ/bit.