Data rate and modelling of GaN-based μLEDs on 200-mm Silicon wafers
Konferenz: ECOC 2024 - 50th European Conference on Optical Communication
22.09.2024-26.09.2024 in Frankfurt, Germany
Tagungsband: ITG-Fb. 317: ECOC 2024
Seiten: 3Sprache: EnglischTyp: PDF
Autoren:
El Badaoui, Sultan; Le Maitre, Patrick; Cibie, Anthony; Maret, Luc; Delaunay, Nicolas; Ballot, Clement; Simon, Julia; Miralles, Bastien; Aventurier, Bernard; De Lamaestre, Roch Espiau; De Martino, Paolo; Le Guennec, Yannis
Inhalt:
In this work, we present both characterization and modelling results on GaN muLEDs fabricated through a 200-mm ASIC compatible process. Such a process is a step forward in the path to realize GaN-based interconnects for a compact, fast and efficient fiber-based communication system.