High Gain and Output Power in Atomic-Layer-Deposited Erbium-Doped Waveguide Amplifiers
Konferenz: ECOC 2024 - 50th European Conference on Optical Communication
22.09.2024-26.09.2024 in Frankfurt, Germany
Tagungsband: ITG-Fb. 317: ECOC 2024
Seiten: 4Sprache: EnglischTyp: PDF
Autoren:
Zhang, Hao; Zhu, Shengyun; Zhou, Xiaoyan; Zhang, Lin
Inhalt:
We demonstrate erbium-doped waveguide amplifiers (EDWAs) composed of polymer and Er(exp 3+):Al2O3 films grown by atomic layer deposition (ALD). These amplifiers exhibit remarkable on-chip net gain of 18 dB and output power of 8.1 dBm, marking a significant milestone for ALD-based EDWAs for practical applications.