Plasmonic Photodetector with InGaAs Membrane on Si Waveguide using Ni-InGaAs Alloy

Inhalt:
We demonstrate III-V/Si hybrid plasmonic waveguide photodetector with InGaAs membrane. Alloying between InGaAs and Ni enables the simple fabrication of plasmonic structure. We achieve 0.13 A/W responsivity at 1 V with 400 nA dark current, demonstrating the potential for low-voltage and high-speed InGaAs plasmonic photodetectors.