Extremely Low Noise APD with InAs/AlAs Atomic Layer Superlattice
Konferenz: ECOC 2024 - 50th European Conference on Optical Communication
22.09.2024-26.09.2024 in Frankfurt, Germany
Tagungsband: ITG-Fb. 317: ECOC 2024
Seiten: 4Sprache: EnglischTyp: PDF
Autoren:
Takemura, Ryota; Yamaguchi, Harunaka; Tsubouchi, Daiki; Fujihara, Ryota; Niwa, Akitsugu; Ishimura, Eitaro; Nishikawa, Satoshi; Tokizaki, Shinya; Miyazaki, Yasunori
Inhalt:
This paper proposes an extremely low-noise APD structure with thin-film multiplication layers suitable for optical communications, using an atomic-scale InAs/AlAs layered structure (superlattice). Ionization rate ratio as low as 0.01 and excess noise factor of 1.9 at a multiplication factor of 10 are achieved.