Quantum Dot Lasers on Silicon by Heterogeneous Integration

Inhalt:
Room-temperature continuous-wave quantum dot laser operation was achieved on silicon by metalorganic chemical vapour deposition direct heteroepitaxy. High quality quantum dots and the full laser structure were selectively grown on foundry-compatible patterned silicon photonic wafers by demonstrating a “zero-gap” interface between the gain and silicon nitride waveguide.