Degradation and Failure of Transistors under 1.2/50 μs Lightning Impulses

Inhalt:
Semiconductor components are highly vulnerable to voltage fluctuations at input and output terminals. Most of the component damages occur due to lightning and switching transients. This study presents the transistor degradation and failure at 1.2/50 mus lightning impulse. Surge applied to collector-emitter terminals at the transistor non-conduction and conduction states. Transistors are prone to degradation when DC power is applied to collector-emitter terminals. The study shows that repetitive transient pulses caused semiconductor degradation. Higher degradation of BJT happens when a transistor is operating in the conduction mode.