Reliability of GaN power chip embedding in different stack up
Konferenz: CIPS 2024 - 13th International Conference on Integrated Power Electronics Systems
12.03.2024-14.03.2024 in Düsseldorf, Germany
Tagungsband: ETG-Fb. 173: CIPS 2024
Seiten: 8Sprache: EnglischTyp: PDF
Autoren:
Hammerl, Matthias (Vitesco Technologies GmbH, Regensburg, Germany)
Abouie, Maryam (Infineon Technologies Canada Inc., Ottawa, Canada)
Rugen, Sarah (Vitesco Technologies Germany GmbH, Nürnberg, Germany)
Sami, Alexander (Infineon Technologies AG, Neubiberg, Germany)
Allirand, Laurence (Vitesco Technologies France SAS, Toulouse, France)
Dresel, Fabian; Leib, Juergen (Fraunhofer Gesellschaft IISB, Erlangen, Germany)
Inhalt:
Reliability is key for an automotive application. The interconnection technology of the power semiconductor device has a major influence on this. For the usage of wide band gap power semiconductor devices, especially for lateral devices like GaN, new interconnection technologies need to be introduced and proven regarding their applicability. This work is focusing on the reliability of GaN power semiconductor devices using power chip embedding as interconnection technology on component and system level.