Surge Current Test of SiC MOSFET with Planar Assembly and Joining Technology
Konferenz: CIPS 2024 - 13th International Conference on Integrated Power Electronics Systems
12.03.2024-14.03.2024 in Düsseldorf, Germany
Tagungsband: ETG-Fb. 173: CIPS 2024
Seiten: 6Sprache: EnglischTyp: PDF
Autoren:
Ye, Yijun; Hensler, Alexander; Botazzoli, Pietro; Bigl, Thomas; Schmidt, Ralf (Siemens AG, Erlangen, Germany)
Basler, Thomas; Lutz, Josef (Chemnitz University of Technology, Chemnitz, Germany)
Inhalt:
This paper investigates the surge current capability of SiC MOSFET body diodes in novel power packages with planar Assembly and Joining Technology. The test results were compared to a standard discrete TO-247-4 package. Thermal impedance measurement results have been used to explain the clear superiority of the planar packaging technologies towards surge current capability.