Energy Balancing in Paralleled SiC MOSFETs During an Avalanche Event
Konferenz: CIPS 2024 - 13th International Conference on Integrated Power Electronics Systems
12.03.2024-14.03.2024 in Düsseldorf, Germany
Tagungsband: ETG-Fb. 173: CIPS 2024
Seiten: 8Sprache: EnglischTyp: PDF
Autoren:
Herrmann, Clemens; He, Mengdi; Alaluss, Mohamed; Basler, Thomas (Chemnitz University of Technology, Chemnitz, Germany)
Elpelt, Rudolf (Infineon Technologies AG, Erlangen, Germany)
Zeng, Guang (Infineon Technologies AG, Neubiberg, Germany)
Inhalt:
In this paper, the influence of avalanche event parameters on energy balancing in paralleled SiC MOSFETs has been investigated to support the understanding of underlying interrelationships. The outcome of these investigations helps in understanding the robustness limits of paralleled SiC MOSFETs in power electronic applications and in evaluating the reduction in robustness due to imbalance-induced derating.