Mission-Profile-Related Evaluation of the Threshold-Voltage Stability of SiC MOSFETs
Konferenz: CIPS 2024 - 13th International Conference on Integrated Power Electronics Systems
12.03.2024-14.03.2024 in Düsseldorf, Germany
Tagungsband: ETG-Fb. 173: CIPS 2024
Seiten: 9Sprache: EnglischTyp: PDF
Autoren:
Oliveira, Joao; Meuret, Regis; Coccetti, Fabio (IRT Saint Exupery, Toulouse, France)
Boldyrjew-Mast, Roman; Herrmann, Clemens; Basler, Thomas (TU Chemnitz, Germany)
Morel, Herve (Ampere Laboratory, Lyon, France)
Inhalt:
The aim of this paper is to study the overall VGS(Th) stability of SiC MOSFETs under application-near conditions taking into account a related mission profile. Different testing concepts (DC-HTGB with and without alternating voltage polarity, and AC/switched-HTGB) will be investigated and overlaid. Static and dynamic parameters such as VGS(Th), RDS(on), and total switching energy are used to monitor the degradation evolution of the devices. Different vendors and device concepts (trench, planar) are tested, since the device design and process could have a large influence on e.g., the SiO2/SiC interface state densities.